| PART |
Description |
Maker |
| TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| MMDT3946 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| BC847S |
Multi-Chip TRANSISTOR (NPN)
|
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
|
| MMDT5451 |
Multi-Chip General Purpose TRANSISTOR (PNP and NPN)
|
SHENZHEN YONGERJIA INDUSTRY...
|
| UMD2N |
NPN-PNP built-in re sistors Multi-Chip Digital Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| TPC6902 |
Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
|
Toshiba Semiconductor
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| MMPQ2222A FFB2222A FFB2222A_1 FMB2222A MMPQ2222ANL |
500 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Multi-Chip General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| CP611 |
Power Transistor PNP - Amp / Switch Transistor Chip
Chip Form: SILICON TRANSISTOR
|
Central Semiconductor Corp
|
